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? semiconductor components industries, llc, 2012 may, 2012 ? rev. 12 1 publication order number: dtc114eet1/d dtc114eet1 series, SDTC114EET1 series bias resistor transistor npn silicon surface mount transistor with monolithic bias resistor network this new series of digital transistors is designed to replace a single device and its external resistor bias network. the brt (bias resistor transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base ? emitter resistor. the brt eliminates these individual components by integrating them into a single device. the use of a brt can reduce both system cost and board space. the device is housed in the sc ? 75/sot ? 416 package which is designed for low power surface mount applications. features ? simplifies circuit design ? reduces board space ? reduces component count ? the sc ? 75/sot ? 416 package can be soldered using wave or reflow ? the modified gull ? winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die ? pb ? free packages are available ? s prefix for automotive and other applications requiring unique site and control change requirements; aec ? q101 qualified and ppap capable maximum ratings (t a = 25 c unless otherwise noted) rating symbol value unit collector-base voltage v cbo 50 vdc collector-emitter voltage v ceo 50 vdc collector current i c 100 madc thermal characteristics rating symbol value unit total device dissipation, fr ? 4 board (note 1) @ t a = 25 c derate above 25 c p d 200 1.6 mw mw/ c thermal resistance, junction ? to ? ambient (note 1) r ja 600 c/w total device dissipation, fr ? 4 board (note 2) @ t a = 25 c derate above 25 c p d 300 2.4 mw mw/ c thermal resistance, junction ? to ? ambient (note 2) r ja 400 c/w junction and storage temperature range t j , t stg ? 55 to +150 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. fr ? 4 @ minimum pad 2. fr ? 4 @ 1.0 1.0 inch pad npn silicon bias resistor transistors pin 3 collector (output) pin 2 emitter (ground) pin 1 base (input) r1 r2 see detailed ordering, marking, and shipping information in the package dimensions section on page 2 of this data sheet. ordering information http://onsemi.com sc ? 75 (sot ? 416) case 463 style 1 3 2 1 marking diagram xx m xx = specific device code xx = (refer to page 2) m = date code* =pb ? free package (note: microdot may be in either location) *date code orientation may vary depending upon manufacturing location.
dtc114eet1 series, SDTC114EET1 series http://onsemi.com 2 ordering information, device marking and resistor values device marking r1 (k) r2 (k) package shipping ? dtc114eet1 8a 10 10 sc ? 75/sot ? 416 3000 tape & reel dtc114eet1g sc ? 75/sot ? 416 (pb ? free) 3000 tape & reel SDTC114EET1g dtc124eet1 8b 22 22 sc ? 75/sot ? 416 3000 tape & reel dtc124eet1g sc ? 75/sot ? 416 (pb ? free) 3000 tape & reel sdtc124eet1g dtc144eet1 8c 47 47 sc ? 75/sot ? 416 3000 tape & reel dtc144eet1g sc ? 75/sot ? 416 (pb ? free) 3000 tape & reel dtc114yet1 8d 10 47 sc ? 75/sot ? 416 3000 tape & reel dtc114yet1g sc ? 75/sot ? 416 (pb ? free) 3000 tape & reel sdtc114yet1g dtc114tet1 94 10 sc ? 75/sot ? 416 3000 tape & reel dtc114tet1g sc ? 75/sot ? 416 (pb ? free) 3000 tape & reel dtc143tet1 8f 4.7 sc ? 75/sot ? 416 3000 tape & reel dtc143tet1g sc ? 75/sot ? 416 (pb ? free) 3000 tape & reel dtc123eet1 8h 2.2 2.2 sc ? 75/sot ? 416 3000 tape & reel dtc123eet1g sc ? 75/sot ? 416 (pb ? free) 3000 tape & reel dtc143eet1 8j 4.7 4.7 sc ? 75/sot ? 416 3000 tape & reel dtc143eet1g sc ? 75/sot ? 416 (pb ? free) 3000 tape & reel dtc143zet1 8k 4.7 47 sc ? 75/sot ? 416 3000 tape & reel dtc143zet1g sc ? 75/sot ? 416 (pb ? free) 3000 tape & reel dtc124xet1 8l 22 47 sc ? 75/sot ? 416 3000 tape & reel dtc124xet1g sc ? 75/sot ? 416 (pb ? free) 3000 tape & reel dtc123jet1 8m 2.2 47 sc ? 75/sot ? 416 3000 tape & reel dtc123jet1g sc ? 75/sot ? 416 (pb ? free) 3000 tape & reel dtc115eet1 8n 100 100 sc ? 75/sot ? 416 3000 tape & reel dtc115eet1g sc ? 75/sot ? 416 (pb ? free) 3000 tape & reel dtc144wet1 8p 47 22 sc ? 75/sot ? 416 3000 tape & reel dtc144wet1g sc ? 75/sot ? 416 3000 tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
dtc114eet1 series, SDTC114EET1 series http://onsemi.com 3 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector ? base cutoff current (v cb = 50 v, i e = 0) i cbo ? ? 100 nadc collector ? emitter cutoff current (v ce = 50 v, i b = 0) i ceo ? ? 500 nadc emitter ? base cutoff current dtc114eet1, SDTC114EET1 (v eb = 6.0 v, i c = 0) dtc124eet1, sdtc124eet1 dtc144eet1 dtc114yet1, sdtc114yet1 dtc114tet1 dtc143tet1 dtc123eet1 dtc143eet1 dtc143zet1 dtc124xet1 dtc123jet1 dtc115eet1 dtc144wet1 i ebo ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? 0.5 0.2 0.1 0.2 0.9 1.9 2.3 1.5 0.18 0.13 0.2 0.05 0.13 madc collector ? base breakdown voltage (i c = 10 a, i e = 0) v (br)cbo 50 ? ? vdc collector ? emitter breakdown voltage (note 3) (i c = 2.0 ma, i b = 0) v (br)ceo 50 ? ? vdc on characteristics (note 3) dc current gain dtc114eet1, SDTC114EET1 (v ce = 10 v, i c = 5.0 ma) dtc124eet1, sdtc124eet1 dtc144eet1 dtc114yet1, sdtc114yet1 dtc114tet1 dtc143tet1 dtc123eet1 dtc143eet1 dtc143zet1 dtc124xet1 dtc123jet1 dtc115eet1 dtc144wet1 h fe 35 60 80 80 160 160 8.0 15 80 80 80 80 80 60 100 140 140 350 350 15 30 200 150 140 150 140 ? ? ? ? ? ? ? ? ? ? ? ? ? collector ? emitter saturation voltage (i c = 10 ma, i b = 0.3 ma) (i c = 10 ma, i b = 5 ma) dtc123eet1 (i c = 10 ma, i b = 1 ma) dtc143tet1/dtc114tet1/ dtc143eet1/dtc143zet1/dtc124xet1 v ce(sat) ? ? 0.25 vdc output voltage (on) (v cc = 5.0 v, v b = 2.5 v, r l = 1.0 k ) dtc114eet1, SDTC114EET1 dtc124eet1, sdtc124eet1 dtc114yet1, sdtc114yet1 dtc114tet1 dtc143tet1 dtc123eet1 dtc143eet1 dtc143zet1 dtc124xet1 dtc123jet1 (v cc = 5.0 v, v b = 3.5 v, r l = 1.0 k ) dtc144eet1 (v cc = 5.0 v, v b = 5.5 v, r l = 1.0 k ) dtc115eet1 (v cc = 5.0 v, v b = 4.0 v, r l = 1.0 k ) dtc144wet1 v ol ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 vdc output voltage (off) (v cc = 5.0 v, v b = 0.5 v, r l = 1.0 k ) (v cc = 5.0 v, v b = 0.25 v, r l = 1.0 k ) dtc143tet1 dtc143zet1 dtc114tet1 v oh 4.9 ? ? vdc 3. pulse test: pulse width < 300 s, duty cycle < 2.0%
dtc114eet1 series, SDTC114EET1 series http://onsemi.com 4 electrical characteristics (t a = 25 c unless otherwise noted) (continued) characteristic symbol min typ max unit input resistor SDTC114EET1, sdtc114et1 dtc124eet1, sdtc124eet1 dtc144eet1 dtc114yet1, sdtc114yet1 dtc114tet1 dtc143tet1 dtc123eet1 dtc143eet1 dtc143zet1 dtc124xet1 dtc123jet1 dtc115eet1 dtc144wet1 r1 7.0 15.4 32.9 7.0 7.0 3.3 1.5 3.3 3.3 15.4 1.54 70 32.9 10 22 47 10 10 4.7 2.2 4.7 4.7 22 2.2 100 47 13 28.6 61.1 13 13 6.1 2.9 6.1 6.1 28.6 2.86 130 61.1 k resistor ratio dtc114eet1/SDTC114EET1/dtc115eet1 dtc124eet1/sdtc124eet1/dtc144eet1 dtc114yet1/sdtc114yet1 dtc143tet1/dtc114tet1 dtc123eet1/dtc143eet1 dtc143zet1 dtc124xet1 dtc123jet1 dtc144wet1d r 1 /r 2 0.8 0.17 ? 0.8 0.055 0.38 0.038 1.7 1.0 0.21 ? 1.0 0.1 0.47 0.047 2.1 1.2 0.25 ? 1.2 0.185 0.56 0.056 2.6 figure 1. derating curve 250 200 150 100 50 0 -50 0 50 100 150 t a , ambient temperature ( c) p d , power dissipation (milliwatts) r ja = 600 c/w 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000 0.001 0.01 0.1 1.0 r(t), normalized transient thermal resistance t, time (s) single pulse 0.01 0.02 0.05 0.1 0.2 d = 0.5 figure 2. normalized thermal response
dtc114eet1 series, SDTC114EET1 series http://onsemi.com 5 typical electrical characteristics ? dtc114eet1, SDTC114EET1 v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain (normalized) figure 3. v ce(sat) versus i c 10 02030 i c , collector current (ma) 10 1 0.1 t a =-25 c 75 c 25 c 40 50 figure 4. dc current gain figure 5. output capacitance 1 0.1 0.01 0.001 020 40 50 i c , collector current (ma) v ce(sat) , maximum collector voltage (volts) 1000 100 10 1 10 100 i c , collector current (ma) t a =75 c 25 c -25 c t a =-25 c 25 c figure 6. output current versus input voltage 75 c 25 c t a =-25 c 100 10 1 0.1 0.01 0.001 01 234 v in , input voltage (volts) 56 78 910 figure 7. input voltage versus output current 50 010203040 4 3 1 2 0 v r , reverse bias voltage (volts) c ob , capacitance (pf) 75 c v ce = 10 v f = 1 mhz t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10
dtc114eet1 series, SDTC114EET1 series http://onsemi.com 6 typical electrical characteristics ? dtc123eet1 75 c 25 c ? 25 c figure 8. v ce(sat) versus i c figure 9. dc current gain figure 10. output capacitance figure 11. output current versus input voltage v in , input voltage (volts) v r , reverse bias voltage (volts) figure 12. input voltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 50 40 20 10 0 i c , collector current (ma) 100 10 1 100 10 1 0.001 v ce(sat) , collector voltage (volts) h fe , dc current gain 4.5 1.5 45 50 40 30 20 10 0 0 c ob , capacitance (pf) 0.5 1 2 4 100 6 5 4 3 2 1 0 0.001 1 10 i c , collector current (ma) 10 9 8 7 10 30 20 10 0 0.1 1 40 50 v in , input voltage (volts) 75 c 25 c t a = ? 25 c 75 c 25 c t a = ? 25 c 75 c 25 c t a = ? 25 c 0.01 35 25 15 5 0.01 0.1 30 3.5 3 2.5 f = 1 mhz t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10 v ce = 10 v
dtc114eet1 series, SDTC114EET1 series http://onsemi.com 7 typical electrical characteristics ? dtc124eet1, sdtc124eet1 v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain (normalized) figure 13. v ce(sat) versus i c figure 14. dc current gain figure 15. output capacitance figure 16. output current versus input voltage 1000 10 i c , collector current (ma) t a =75 c 25 c -25 c 100 10 1 100 75 c 25 c 100 0 v in , input voltage (volts) 10 1 0.1 0.01 0.001 246810 t a =-25 c 0 i c , collector current (ma) 100 t a =-25 c 75 c 10 1 0.1 10 20 30 40 50 25 c figure 17. input voltage versus output current 0.001 v ce(sat) , maximum collector voltage (volts ) t a =-25 c 75 c 25 c 0.01 0.1 1 40 i c , collector current (ma) 0 20 50 50 0 10 203040 4 3 2 1 0 v r , reverse bias voltage (volts) c ob , capacitance (pf) i c /i b = 10 v ce = 10 v f = 1 mhz t a = 25 c v o = 5 v v o = 0.2 v
dtc114eet1 series, SDTC114EET1 series http://onsemi.com 8 typical electrical characteristics ? dtc144eet1 v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain (normalized) figure 18. v ce(sat) versus i c 0246810 100 10 1 0.1 0.01 0.001 v in , input voltage (volts) t a =-25 c 75 c 25 c figure 19. dc current gain figure 20. output capacitance 100 10 1 0.1 010 20 3040 50 i c , collector current (ma) figure 21. output current versus input voltage 1000 10 i c , collector current (ma) t a =75 c 25 c -25 c 100 10 1 100 25 c 75 c 50 010203040 1 0.8 0.6 0.4 0.2 0 v r , reverse bias voltage (volts) c ob , capacitance (pf) figure 22. input voltage versus output current 0 20 40 50 10 1 0.1 0.01 i c , collector current (ma) 25 c 75 c v ce(sat) , maximum collector voltage (volts ) v ce = 10 v f = 1 mhz t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10 t a =-25 c t a =-25 c
dtc114eet1 series, SDTC114EET1 series http://onsemi.com 9 typical electrical characteristics ? dtc114yet1, sdtc114yet1 10 1 0.1 01020304050 100 10 1 0246810 4 3.5 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 1520 2530 3540 4550 v r , reverse bias voltage (volts) v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain (normalized) figure 23. v ce(sat) versus i c i c , collector current (ma) 0 20406080 v ce(sat) , maximum collector voltage (volts) figure 24. dc current gain 1 10 100 i c , collector current (ma) figure 25. output capacitance figure 26. output current versus input voltage v in , input voltage (volts) c ob , capacitance (pf) figure 27. input voltage versus output current i c , collector current (ma) 1 0.1 0.01 0.001 -25 c 25 c t a =75 c v ce = 10 300 250 200 150 100 50 0 2468 1520405060708090 f = 1 mhz t a = 25 c 25 c i c /i b = 10 t a =-25 c t a =75 c 25 c -25 c v o = 0.2 v t a =-25 c 75 c v o = 5 v 25 c 75 c
dtc114eet1 series, SDTC114EET1 series http://onsemi.com 10 typical electrical characteristics ? dtc123jet1g 75 c 25 c ? 25 c figure 28. v ce(sat) versus i c figure 29. dc current gain figure 30. output capacitance figure 31. output current versus input voltage v in , input voltage (volts) v r , reverse bias voltage (volts) figure 32. input voltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 50 40 20 10 0 i c , collector current (ma) 100 10 1 1000 10 1 0.001 v ce(sat) , collector voltage (volts) h fe , dc current gain 1.5 45 50 40 30 20 10 0 0 c ob , capacitance (pf) 0.5 1 2 4 100 6 5 4 3 2 1 0 0.001 1 10 i c , collector current (ma) 10 9 8 7 10 30 20 10 0 0.1 1 40 50 v in , input voltage (volts) 75 c 25 c t a = ? 25 c 75 c 25 c t a = ? 25 c 75 c 25 c t a = ? 25 c 0.01 35 25 15 5 0.01 0.1 30 3.5 3 2.5 100 4.5 f = 1 mhz t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10 v ce = 10 v
dtc114eet1 series, SDTC114EET1 series http://onsemi.com 11 typical electrical characteristics ? dtc143zet1 ? 55 c 150 c figure 33. v ce(sat) versus i c figure 34. dc current gain figure 35. output capacitance figure 36. output current versus input voltage v in , input voltage (v) v r , reverse bias voltage (v) figure 37. input voltage versus output current i c , collector current (ma) i c , collector current (ma) i c , collector current (ma) v ce(sat) , collector ? emitter saturation voltage (v) h fe , dc current gain 45 50 40 30 20 10 0 c ob , capacitance (pf) i c , collector current (ma) v in , input voltage (v) 35 25 15 5 f = 1 mhz t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10 v ce = 10 v t a = 25 c 1 0.1 0.01 1 10 100 1 0.1 0.01 1 10 100 ? 55 c 150 c t a = 25 c 4 3 2 1 0 t a = 25 c ? 55 c 150 c 01 4 23 100 10 1 0.1 0.01 0.001 t a = 25 c ? 55 c 150 c 10 1 0.1 50 40 30 20 10 0
dtc114eet1 series, SDTC114EET1 series http://onsemi.com 12 typical applications for npn brts load +12 v figure 38. level shifter: connects 12 or 24 volt circuits to logic in out v cc isolated load from p or other logic +12 v figure 39. open collector inverter: inverts the input signal figure 40. inexpensive, unregulated current source
dtc114eet1 series, SDTC114EET1 series http://onsemi.com 13 package dimensions sc ? 75/sot ? 416 case 463 issue f style 1: pin 1. base 2. emitter 3. collector notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. m 0.20 (0.008) d ? e ? ? d ? b e 3 pl 0.20 (0.008) e c l a a1 3 2 1 h e dim min nom max millimeters a 0.70 0.80 0.90 a1 0.00 0.05 0.10 b c 0.10 0.15 0.25 d 1.55 1.60 1.65 e e 1.00 bsc 0.027 0.031 0.035 0.000 0.002 0.004 0.004 0.006 0.010 0.059 0.063 0.067 0.04 bsc min nom max inches 0.15 0.20 0.30 0.006 0.008 0.012 h e l 0.10 0.15 0.20 1.50 1.60 1.70 0.004 0.006 0.008 0.061 0.063 0.065 0.70 0.80 0.90 0.027 0.031 0.035 0.787 0.031 0.508 0.020 1.000 0.039 mm inches scale 10:1 0.356 0.014 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* 1.803 0.071 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 dtc114eet1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loca l sales representative

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